stp stp stp stp 4 4 4 4 4 4 4 4 07 07 07 07 p channel enhancement mode mosfet - 12 a 120 bentley square, mountain view, ca 94040 usa tel: (650) 9389294 fax: (650) 9389295 copyright ? 2007, stanson corp. stp 4 4 07 200 9 . v1 1 description description description description the stp 4 4 07 is the p-channel logic enhancement mode power field effect transistor is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching. pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking sop-8 sop-8 sop-8 sop-8 feature feature feature feature ? -30v/- 12 a, r ds(on) = 9 m @v gs = -20v ? -30v/- 12 a, r ds(on) = 10 m @v gs = - 10v ? -30v/- 10 a, r ds(on) = 15 m @v gs = - 5v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design
stp stp stp stp 4 4 4 4 4 4 4 4 07 07 07 07 p channel enhancement mode mosfet - 12 a 120 bentley square, mountain view, ca 94040 usa tel: (650) 9389294 fax: (650) 9389295 copyright ? 2007, stanson corp. stp 4 4 07 200 9 . v1 2 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage vdss -30 v gate-source voltage vgss 2 3 v continuous drain current (tj=150 ) ta=25 ta=70 id - 12 - 10 a pulsed drain current idm - 60 a continuous source current (diode conduction) is - 3 0 a power dissipation ta=25 ta=70 pd 3.1 2.0 w operation junction temperature tj -55/ 150 storage temperature range tstg -55/150 thermal resistance-junction to ambient r ja 70 /w
stp stp stp stp 4 4 4 4 4 4 4 4 07 07 07 07 p channel enhancement mode mosfet - 12 a 120 bentley square, mountain view, ca 94040 usa tel: (650) 9389294 fax: (650) 9389295 copyright ? 2007, stanson corp. stp 4 4 07 200 9 . v1 3 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,id=-250ua -30 v gate threshold voltage v gs(th) v ds =v gs ,id=- 2 50ua -1. 0 -3.0 v gate leakage current i gss v ds =0v,v gs = 2 5 v 100 na zero gate voltage drain current i dss t j = 5 5 v ds =- 30 v,v gs =0v -1 ua v ds =- 30 v,v gs =0v -5 on-state drain current i d(on) v ds = -5v,v gs =- 10 v - 60 a drain-source on- resistance r ds(on) v gs =- 2 0v,i d = - 1 2 a v gs =- 10 v,i d =- 1 2 a v gs =- 5 v, i d =- 10 a 9 1 0 15 m forward transconductance gfs v ds =- 5 v,i d =- 10a 26 s diode forward voltage v sd i s =- 1 . 0 a,v gs =0v -1 v dynamic dynamic dynamic dynamic total gate charge q g v ds =-15v,v gs =0v f=1mhz 30 nc gate-source charge q gs 4 .3 gate-drain charge q gd 10 input capacitance c iss v ds ==-15v,vgs=0v f=1mhz 2076 2500 pf output capacitance c oss 400 reverse transfer c apacitance c rss 302 turn-on time t d(on) tr v dd =15v,r l = 1.25 i d =-1a,v gen =-10v r g = 3 1 0 .4 ns 24 turn-off time t d(off) tf 12 .6 12
stp stp stp stp 4 4 4 4 4 4 4 4 07 07 07 07 p channel enhancement mode mosfet - 12 a 120 bentley square, mountain view, ca 94040 usa tel: (650) 9389294 fax: (650) 9389295 copyright ? 2007, stanson corp. stp 4 4 07 200 9 . v1 4 typical typical typical typical characterictics characterictics characterictics characterictics
stp stp stp stp 4 4 4 4 4 4 4 4 07 07 07 07 p channel enhancement mode mosfet - 12 a 120 bentley square, mountain view, ca 94040 usa tel: (650) 9389294 fax: (650) 9389295 copyright ? 2007, stanson corp. stp 4 4 07 200 9 . v1 5 typical typical typical typical characterictics characterictics characterictics characterictics
stp stp stp stp 4 4 4 4 4 4 4 4 07 07 07 07 p channel enhancement mode mosfet - 12 a 120 bentley square, mountain view, ca 94040 usa tel: (650) 9389294 fax: (650) 9389295 copyright ? 2007, stanson corp. stp 4 4 07 200 9 . v1 6 package package package package outline outline outline outline sop-8p sop-8p sop-8p sop-8p
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